DE475-102N20A rfpowermosfet v dss = 1000v i d25 = 20a r ds(on) 0.6 p dc = 1800w symbol testconditions maximumratings v dss t j =25cto150c 1000 v v dgr t j =25cto150c;r gs =1m 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c =25c 20 a i dm t c =25c,pulsewidthlimitedbyt jm 120 a i ar t c =25c 20 a e ar t c =25c 30 mj dv/dt i s i dm ,di/dt ?100a/ s,v dd v dss , t j 150c,r g =0.2 5 v/ns i s =0 >200 v/ns p dhs t c =25c derate4.4w/cabove25c 730 w p damb t c =25c 4.5 w r thjhs 0.20 c/w p dc 1800 w r thjc 0.08 c/w symbol testconditions characteristicvalues t j =25cunlessotherwisespecified min. typ. max. v dss v gs =0v,i d =3ma 1000 v v gs(th) v ds =v gs ,i d =250a 3.0 3.6 5.0 v i gss v gs =20v dc ,v ds =0 100 na i dss v ds =0.8v dss t j =25c v gs =0t j =125c 50 1 a ma r ds(on) 0.6 g fs v ds =15v,i d =0.5i d25 ,pulsetest 6 9 s v gs =15v,i d =0.5i d25 pulsetest,t 300 s,dutycycled 2% t j 55 +150 c t jm 150 c t stg 55 +150 c t l 1.6mm(0.063in)fromcasefor10s 300 c weight 3 g features ? isolatedsubstrate ? highisolationvoltage(>2500v) ? excellentthermaltransfer ? increasedtemperatureandpower cyclingcapability ? ixysadvancedlowq g process ? lowgatechargeandcapacitances ? easiertodrive ? fasterswitching ? lowr ds(on) ? verylowinsertioninductance(<2nh) ? noberylliumoxide(beo)orother hazardousmaterials advantages ? optimizedforrfandhighspeed switchingatfrequenciesto30mhz ? easytomountnoinsulatorsneeded ? highpowerdensity nchannelenhancementmode lowq g andr g highdv/dt nanosecondswitching drain sg1 sg2 gate sd1 sd2
DE475-102N20A rfpowermosfet symbol testconditions characteristicvalues min. typ. max. r g 0.3 c iss 6200 pf c oss v gs =0v,v ds =0.8v dss(max) , f=1mhz 185 pf c rss 44 pf c stray backmetaltoanypin 46 pf t d(on) 5 ns t on v gs =15v,v ds =0.8v dss i d =0.5i dm r g =0.2 (external) 5 ns t d(off) 5 ns t off 8 ns q g(on) 145 nc q gs v gs =10v,v ds =0.5v dss i d =0.5i d25 28 nc q gd 68 nc ( t j =25cunlessotherwisespecified ) sourcedraindiode characteristicvalues ( t j =25cunlessotherwisespecified ) symbol testconditions min. typ. max. i s v gs =0v 20 a i sm repetitive;pulsewidthlimitedbyt jm 120 a v sd 1.5 v t rr 200 ns i f =i s ,v gs =0v, pulsetest,t 300 s,dutycycle 2% q rm i f =i s ,di/dt=100a/ s, v r =100v 0.6 c i rm 14 a ixysrfreservestherighttochangelimits,testc onditionsanddimensions. ixysrfmosfetsarecoveredbyoneormoreofthef ollowingu.s.patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5 ,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5 ,486,715 5,381,025 5,640,045 fordetaileddevicemountingandinstallationinstr uctions,seethe device installation & mounting instructions technicalnoteonthe ixysrfwebsiteat; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_ series_mosfet_installation_instructions.pdf caution:operationatorabovethemaximumratings valuesmayimpactdevicereliabilityorcauseperma nentdamagetothedevice. informationinthisdocumentisbelievedtobeaccu rateandreliable . ixysrfreservestherighttomakechangestoinform ationpub lishedinthisdocumentatanytimeandwithoutnot ice.
DE475-102N20A rfpowermosfet v d s vs. capacitance 1 10 100 1000 10000 0 100 200 300 400 500 600 700 800 v ds voltage(v) capacitance(pf) typicaltransfercharacteristics v ds =50v,pw=15s 0 10 20 30 40 50 60 4 5 6 7 8 9 10 11 12 v gs ,gatetosourcevoltage(v) i d ,draincurrent(a) extendedtypicaloutputcharacteristics 0 20 40 60 80 0 25 50 75 100 125 v ds ,draintosourcevoltage(v) i d ,draincurrnet(a) typicaloutputcharacteristics 0 10 20 30 40 0 10 20 30 40 50 60 70 80 90 100 110 120 v ds ,draintosourcevoltage(v) i d ,draincurrnet(a) gatechargevs.gatetosourcevoltage v gs =500v,i d =10a,i g =4m a 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 gatecharge(nc) gatetosourcevoltage(v) c iss c oss c rss fig.1 fig.2 fig.3 fig.5 fig.4 top 910v 8v 7.5v 7v 6.5v 6v bottom 5.5v top 810v 7.5v 7v 6.5v 6v 5.5v bottom 5v
DE475-102N20A rfpowermosfet fig.6packagedrawing drain gate source source source source
DE475-102N20A rfpowermosfet an ixys company 2401researchblvd.,suite108 fortcollins,cousa80526 9704931901fax:9704931903 email:sales@ixyscolorado.com web:http://www.ixyscolorado.com 102n20adeseriesspicemodel thedeseriesspicemodelisillustratedinfigure 7.themodelisanexpansionofthespice level3mosfetmodel.itincludesthestrayinductivet ermsl g ,l s andl d .rdisther ds(on) ofthe device,rdsistheresistiveleakageterm.theoutput capacitance,c oss ,andreversetransferca pacitance,c rss aremodeledwithreversedbiaseddiodes.thisprovid esavaractortyperesponse necessaryforahighpowerdevicemodel.theturnon delayandtheturnoffdelayareadjusted viaronandroff. figure7deseriesspicemodel thisspicemodelmaybedownloadedasatextfilef romtheixysrfwebsiteat http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/de475102n20a.html netlist: .subckt102n20a102030 *terminals:dgs *1000volt20amp0.6ohmnchannelpowermosf et *rev.a102901 m11233dmosl=1uw=1u ron560.5 don62d1 rof57.1 dof27d1 d1crs28d2 d2crs18d2 cgs236.2n rd410.5 dcos31d3 rds135.0meg ls330.5n ld1041n lg2051n .modeldmosnmos(level=3vto=3.0kp=3.8) .modeld1d(is=.5fcjo=1pbv=100m=.5vj=.6tt=1n) .modeld2d(is=.5fcjo=400pbv=1000m=.4vj=.6tt= 400nrs=10m) .modeld3d(is=.5fcjo=900pbv=1000m=.3vj=.4tt= 400nrs=10m) .ends doc#92000238rev6 ?2009ixysrf
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